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Circuit design with adjustable threshold using the independently controlled double gate feature of the Vertical Slit Field Effect Transistor (VESFET)
[摘要] The recently introduced Vertical Slit Field Effect Transistor allows foradjusting its threshold voltage through independent controllable gates. Thisfeature can be applied to a broad range of circuits. In this paper twoexamples are presented. First, a ring oscillator with a wide frequency tuningrange and second, a Schmitt trigger with a controllable hysteresis.
[发布日期]  [发布机构] 
[效力级别]  [学科分类] 电子、光学、磁材料
[关键词]  [时效性] 
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