Influence of gate tunneling currents on switched capacitor integrators

[摘要] In order to achieve a higher level of integrationin modern VLSI systems, not only the lateral geometrical dimensionshave to be scaled. Lowering the supply voltagealso requires scaling down the oxide thickness of the transistors.While the oxide thickness is scaled down proportionallywith the supply voltage, the gate tunneling currents grow exponentially,which results in special issues concerning deviationsin charge based analog and mixed signal circuitry. Theinfluence of gate tunneling currents on this kind of circuitswill be demonstrated at a fully differential switched capacitorintegrator. The used process data is derived from the InternationalTechnology Roadmap for Semiconductors (ITRSRoadmap, 2006). The Parameter sets for the simulations arebased on the Predictive Technology Model of the ArizonaState University Modelling Group for the 65 nm Technologynode (Predictive Technology Model, 2008).

[学科分类] 电子、光学、磁材料