CMOS low noise amplifiers for 1.575 GHz GPS applications

[摘要] This paper presents Low Noise Amplifier (LNA) versions designed for1.575 GHz L1 Band Global Positioning System (GPS) applications. A 0.35 μmstandard CMOS process is used for implementation of these designversions. Different versions are designed to compare the results, analyzesome effects and optimize some critical performance criteria. On-chipinductors with different quality factors and a slight topology change areutilized to achieve this variety. It is proven through both on-wafer andon-PCB measurements that the LNA versions operate at a supply voltage rangevarying from 2.1 V to 3.6 V drawing a current of 10 mA and achieve a gain of13 dB to 17 dB with a Noise Figure (NF) of 1.5 dB. Input referred 1 dBcompression point (ICP) is measured as −5.5 dBm and −10 dBm for differentversions.

[学科分类] 电子、光学、磁材料