A Verilog-A model of an undoped symmetric dual-gate MOSFET

[摘要] We describe a new procedure of solving the electrostaticpotentials in the silicon film of an undoped DG SOI MOSFETstructure. Starting from a model previously described in theliterature by Malobabic et al. (2004), we propose the bisection methodfor the solution of transcendental equation giving the surfaceelectrostatic potential of the silicon channel, as a function of thegate to source voltage and the voltage along the channel. The abovecalculated results are used for obtaining the charges andcorresponding drain current in the DG MOSFET transistor. The entiremodel is implemented in Verilog A and can be used insideCadence for the determination of the static regime of electricalcircuits based on undoped symmetric DG SOI MOSFET. As a case study,a simple common-source amplifier built with such a novel device isanalyzed, showing the currents and voltages present in the circuit.

[学科分类] 电子、光学、磁材料