Monotonic transition based forward body bias for dual threshold voltage low power embedded processors

[摘要] Dual threshold voltage and forward body bias techniques areeffective ways to optimally balance the standby leakage power andperformance. In this paper, we propose a novel fine-grained forwardbody biasing scheme for monotonic static logic circuits. In theproposed scheme, the forward body bias is applied to high thresholdvoltage of either the pull-up or the pull-down network based on theevaluation transition and the state of operation. This techniqueimproves the low skew NAND and NOR circuit performance by 7% and11%,high skew NAND and NOR by 8% and 13% respectively. Itreduces both active and standby leakage power as compared tomonotonic static CMOS with dual-V_T technique. The simulations arecarried out using 130 nm mixed mode process technology to validateour proposed technique.

[学科分类] 电子、光学、磁材料