A low-noise current preamplifier in 120 nm CMOS technology

[摘要] In this paper we examine the impact of deep sub-micron CMOS technology onanalog circuit design with a special focus on the noise performance and theability to design low-noise preamplifiers. To point out, why CMOS technologycan grow to a key technology in low-noise and high-speed applications,various amplifier stages, applied in literature, are compared. One, that fitsas a current preamplifier for low-noise applications, is the current mirror.Starting from the basic current mirror, an enhanced current preamplifier isdeveloped, that offers low-noise and high-speed operation. The suggested chipis realized in 0.12 μm CMOS technology and needs a chip area of 100 μm×280 μm.It consumes about 15 mW at a supply voltage of1.5 V. The presented current preamplifier has a bandwidth of 750 MHz and again of 36 dB. The fields of application for current preamplifiers are, forinstance, charge amplifiers, amplifiers for low-voltage differentialsignaling (LVDS) based point-to-point data links or preamplifiers forphotodetectors.

[学科分类] 电子、光学、磁材料