Results and limits in the 1-D analytical modeling for the asymmetric DG SOI MOSFET

[摘要] This paper presents the results and the limits of 1-D analytical modeling ofelectrostatic potential in the low-doped p type silicon body of the asymmetricn-channel DG SOI MOSFET, where the contribution to the asymmetry comes onlyfrom p- and n-type doping of polysilicon used as the gate electrodes. Solving Poisson'sequation with boundary conditions based on the continuity of normal electricaldisplacement at interfaces and the presence of a minimum electrostatic potentialby using the Matlab code we have obtained a minimum potential with a slow variationin the central zone of silicon with the value pinned around 0.46 V, where the appliedV_GS voltage varies from 0.45 V to 0.95 V. The paper states clearly the validitydomain of the analytical solution and the important effect of the localizationof the minimum electrostatic potential value on the potential variation atinterfaces as a function of the applied V_GS voltage.

[学科分类] 电子、光学、磁材料