Investigation of semiconducting materials for magnetic field sensors in strong magnetic fields under cryogenic temperatures

[摘要] Influence of strong magnetic fields B 3 T under cryogenic temperatures (1.5,4.2) K on the signals of Hall sensors based on single-crystal whiskers (InSb, InAs) and nano-sized heterostructures (InSb/i-GaAs, InAs/i-GaAs) have been investigated. There are distinct Shubnikov - de Haas oscillations for whisker-based sensors, whereas heterostructures-based sensors demonstrate the linear field dependence of the output signal. This difference explained by the higher concentration of structure defects in the heterostructures. The derived results confirm the operability of Hall sensors based on indicated heterostructures for the magnetic fields diagnostics in the temperature and field conditions of modern particle accelerators and fusion reactors.

[发布机构] National Research Nuclear University MEPhI, 31 Kashirskoe Shosse, Moscow; 115409, Russia^1;University of Wisconsin-Madison, 1848 University Avenue, Madison; WI; 53726, United States^2;International Laboratory of High Magnetic Fields and Low Temperatures, 95 Gajowicka Street, Wroclaw; 53-421, Poland^3;Lviv Polytechnic National University, 12 Bandera Street, Lviv; 79013, Ukraine^4

[关键词] Cryogenic temperatures;Field conditions;Field dependence;Magnetic field sensors;Semiconducting materials;Shubnikov de-Haas oscillation;Strong magnetic fields;Structure defects