An Investigation of the MBE Growth of InGaAs and InAlAs Lattice Matched to InP

[摘要] The MBE growth of In0.53Gao.47As and In0.52Al0.48As lattice matched to InP is investigated. Accurate formulae relating the splitting between X-ray rocking curve peaks to the composition of InxGa(1-x)As and InxAl(1-x)As are developed, enabling accurate characterisation of alloy composition close to the lattice matched condition. Close scrutiny of the behaviour of InAs RHEED intensity oscillations indicates that the onset of In droplet formation during InAs growth correlates with a small reduction in the period of the intensity oscillations. This reduction can therefore be used to identify the minimum permissible As2 partial pressure for good morphology growth at any substrate temperature. The measured values of minimum As2 flux for the growth of InAs agree very well with predictions based on simple thermodynamic arguments. These arguments can be extended to deal with the behaviour of In0.53Gao.47As and In0.52Al0.48As by treating the ternary alloys as a pseudo-binary compounds. The results are again in excellent agreement with experimental measurements, although in the case of In0.52Al0.48As it is necessary to derive the necessary thermodynamical constants by performing a fit to the experimental data.

[发布机构] University:University of Glasgow

[关键词] Materials science, Electrical engineering, Condensed matter physics