Theory of Linear and Nonlinear Optical Susceptabilities of Semiconductor Quantum Wells

[摘要] In this thesis the optical properties of semiconductor quantum well structures suitable for optical integration, particularly those based on the GaAs/GaAlAs material system, are studied. The linear optical properties due to interband transitions, absorption and refractive index change, of semiconductor square, disordered and asymmetric step quantum wells are studied theoretically. The model used for the calculations is the density matrix formalism with intraband relaxation taken into account. The electronic properties of the different quantum well structures are obtained from the envelope function approximation including the valence band mixing model.

[发布机构] University:University of Glasgow

[关键词] Electrical engineering, Optics, Applied physics