Fabrication and characterisation of InP/InGaAs heterojunction bipolar transistors

[摘要] Heterojunction bipolar transistors (HBTs) have wellestablished themselves since the invention of modern day epitaxial growth technology in nearly all areas of electronic integrated circuits varying from high speed Indium Phosphide (InP) based devices through to future high-power gallium nitride (GaN) applications.This thesis begins with a review of the current state of the art HBT devices, along with comparison between different materials used within such devices. A large portion of the work covers the fabrication process of an Indium Phosphide/ Indium Gallium Arsenide (InP/InGaAs) based Single-HBT (SHBT) using only wet etching, along with the comparison between different techniques involved. RF and DC measurements for the fabricated devices are also reported of HBTs with emitter size 16μm × 8μm with achieving speeds of FMAX and FT being, 3.5GHz and 9GHz respectively.Finally, being that the accurate extraction of the small-signal equivalent circuit is a crucial part in the process development and optimisation of HBTs, the investigation and development of an accurate small signal device modelling technique was evaluated and developed this project.

[发布机构] University:University of Glasgow;Department:School of Engineering

[关键词] InP/InGaAs, HBT, SHBT