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Effect of a Funnel-Shaped Radiation Shield on the Characteristics of a Silicon CZ Furnace
[摘要] References(18)Cited-By(3)For the 6″ silicon CZ system, effects of a funnel-shaped radiation shield on the temperature profiles in the melt and crystal, the melt/crystal interface shape and also the distribution of the thermal stresses were investigated theoretically by the finite element analysis based on the conduction-dominated model.It is found that a funnel-shaped radiation shield can make the melt/crystal interface less convex to the crystal (relatively flatter), providing a higher pull rate and smaller thermal stresses in the crystal compared with other radiation shield geometries, such as a doughnut (torus) shape. Also, the principal operating conditions in the CZ system, such as the crucible temperature, can be changed widely by selecting the emissivity and/or thickness of the shield.
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[关键词] Crystal Growth;Silicon;Single Crystal;Radiation Heat Transfer;Thermal Stress;Finite Element Analysis;Czochralski Method [时效性] 
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