Characterisation of Reactive Ion Etch Processes for Ternary III-V Semiconductors

[摘要] The work presented within this thesis concerns the development and characterisation of reactive ion etch processes for the compound Ill-V semiconductors Al0.3Ga0.7As, In0.53Ga0.47 As and In0.52Al0.48As. Two different etch chemistries, one based on the mixture of methane and hydrogen and the other formed from halogenated gases were studied.

[发布机构] University:University of Glasgow

[关键词] Electrical engineering, Materials science