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Photoreflectance study of partially relaxed epitaxial InGaAs on GaAs

[摘要]

[发布日期] [发布机构]

[效力级别] [学科分类] 光谱学

[关键词] III-V semiconductors;PR spectroscopy;X-ray diffraction;strain relaxation;gallium indium arsenide [时效性]

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