New method of MOVPE process design for the growth of FGM AlGaAs/GaAs photodetectors

[摘要]

[发布日期] [发布机构]

[效力级别] [学科分类] 光谱学

[关键词] growth models;metalorganic vapor phase epitaxy (MOVPE);gallium compounds;semiconducting III-V materials [时效性]

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