Characterization of InGaN structures grown by epitaxial lateral overgrowth over a-plane GaN template
[摘要]
[发布日期] [发布机构]
[效力级别] [学科分类] 光谱学
[关键词] luminescence;InGaN/GaN;non-polar;multiple quantum wells (MQWs);epitaxial lateral overgrowth (ELOG);quantum dots (QDs) [时效性]
