Capacitance-voltage and Auger chemical profile studies on AlGaN/GaN structures passivated by SiO2/Si3N4 and SiNx/Si3N4 bilayers
[摘要]
[发布日期] [发布机构]
[效力级别] [学科分类] 光谱学
[关键词] gallium nitride;HEMT;insulated gate;passivation;C-V;Auger spectroscopy;chemical in-depth profiles [时效性]
