Technology and characterization of p-i-n photodetectors with DQW (In,Ga)(As,N)/GaAs active region
[摘要]
[发布日期] [发布机构]
[效力级别] [学科分类] 光谱学
[关键词] p-i-n photodetector;diluted nitrides;(In;Ga)(As;N);GaAs-based photodetectors;double quantum well (DQW) heterostructures [时效性]
