Investigation of strained InGaAs layers on GaAs substrate

[摘要]

[学科分类] 光谱学

[关键词] low pressure metalorganic vapour phase epitaxy (LP MOVPE);strained InGaAs layer;critical layer thickness;high resolution X-ray diffractometry (HR XRD);diffuse scattering;atomic force microscopy (AFM);misfit dislocation;plastic relaxation