An impact of a localization of an oxide aperture within a vertical-cavity surface-emitting diode laser (VCSEL) cavity on its lasing threshold
[摘要]
[发布日期] [发布机构]
[效力级别] [学科分类] 光谱学
[关键词] semiconductor laser;vertical-cavity surface-emitting diode laser (VCSEL);oxide-confined VCSELs;fundamental-mode operation [时效性]
