High resolution photoemission yield study of the GaAs(100) surface cleaned by atomic hydrogen
[摘要]
[发布日期] [发布机构]
[效力级别] [学科分类] 光谱学
[关键词] GaAs;atomic hydrogen cleaning;photoemission yield spectroscopy (PYS);surface states;interface Fermi level pinning;work function;ionization energy [时效性]
