Magnetic field sensors based on undoped In0.53Ga0.47As/InP heterostructures fabricated by molecular beam epitaxy and metalorganic chemical vapor deposition
[摘要]
[发布日期] [发布机构]
[效力级别] [学科分类] 光谱学
[关键词] Hall sensors;magnetoresistors;InGaAs/InP heterostructures;electronic transport;geometric correction factor;molecular beam epitaxy (MBE);metalorganic chemical vapor deposition (MOCVD) [时效性]
