Influence of surface states and bulk traps on non-equilibrium phenomena at GaAs and GaN surfaces

[摘要]

[发布日期] [发布机构]

[效力级别] [学科分类] 光谱学

[关键词] gallium arsenide;gallium nitride;surface states;bulk traps;photoluminescence;surface photovoltage [时效性]

浏览次数：20