Electrical properties of Ta2O5 films deposited on ZnO

[摘要] High dielectric constant (high-ð‘�?) Ta₂O₅ films have been deposited on ZnO/ð‘�?-Si substrate by microwave plasma at 150°C. Structure and composition of the ZnO/ð‘�?-Si films have been investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) for chemical composition. The electrical properties of the Ta₂O₅/ZnO/ð‘�?-Si metal insulator semiconductor (MIS) structures were studied using high frequency capacitanceâ€�?�voltage (𝐶â€�?�ð�?��??), conductanceâ€�?�voltage (𝐺â€�?�ð�?��??) and currentâ€�?�voltage (𝐼â€�?�ð�?��??) characteristics. Charged trapping properties have been studied by measuring the gate voltage shift due to trapped charge generation under Fowlerâ€�?�Nordheim (𝐹â€�?�ð�?��?) constant current stressing.

[学科分类] 材料工程

[关键词] ZnO;Ta2O5;rf magnetron sputtering;microwave plasma;PECVD;high-ð‘�?.