Electrical characterization of low temperature deposited oxide films on ZnO/�??-Si substrate

[摘要] Thin films of silicon dioxide are deposited on ZnO/ð‘�??-Si substrate at a low temperature using tetraethylorthosilicate (TEOS). The ZnO/ð‘�??-Si films have been characterized by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The border trap density (ð‘�??_bt) and fixed oxide charge density (ð‘�??_f/ð‘�?) of the SiO₂/ZnO/ð‘�??-Si films are found to be 3.9 Ã�? 10¹⁰ cm^-2 and 1.048 Ã�? 10¹¹ cm^-2, respectively. The trapping characteristics and stress induced leakage current (SILC) have also been studied under Fowlerâ€�?�Nordheim (Fâ€�?�N) constant current stressing.

[学科分类] 材料工程

[关键词] ZnO;TEOS;border trap density;AFM;hysteresis.