The effects of lithographic residues and humidity on graphene field effect devices

[摘要] Recently, unknown-manner changes in charge neutrality point (CNP) positioning were ascribed to humidity at graphene field effect transistors (GFETs). While the exactmeans of humidity interacting with hydrophobicgraphene remains unknown, this work examines pristine and lithographic-process-applied graphene surfaces with surface enhanced Raman spectra (SERS). SERS analysis shows that the lithographic-process-applied graphenedoes not have the same properties as those of pristine graphene. Furthermore, this study has experimentally investigated the effect of humidity on the transfer characteristics of GFET and proposed a model to explain the formationof asymmetric $I_{m DS}â€�?�V_{m bg}$ branches in accordance with the SERS results and humidity responses.

[学科分类] 材料工程

[关键词] Graphene;SERS;GFET;humidity.