Electrical characteristics of metal�?�insulator�?�semiconductor and metal�?�insulator�?�semiconductor�?�insulator�?�metal capacitors under different high-$k$ gate dielectrics investigated in the semi-classical and quantum mechanical models

[摘要] In this paper the electrical characteristics of metalâ€�?�insulatorâ€�?�semiconductor (MIS) and metalâ€�?�insulatorâ€�?�semiconductorâ€�?�insulatorâ€�?�metal (MISIM) capacitors with (100)-oriented p-type silicon as a substrate under different high-$k$ gate dielectrics (SiO$_2$, HfO$_2$, La$_2$O$_3$ and TiO$_2$) are investigated in the semi-classical and quantum mechanical models. We review the quantum correction in the inversion layer charge density for p-doped structures. The purpose of this paper is to point out the differences between the semi-classical and quantum mechanical charge descriptions at the insulatorâ€�?�semiconductor interface and the effect of the type of oxide and their position (gate oxide or buried oxide) in our structures. In particular, capacitanceâ€�?�voltage ($Câ€�?�V$), relative position of the sub-band energies and their wavefunctions are studied to examine qualitatively and quantitatively the electron states and charging mechanisms in our devices. We find that parameters such as threshold voltage and device trans-conductance are enormously sensitive to the proper treatment of quantization effects.

[学科分类] 材料工程

[关键词] Nanotechnology;MIS device;MISIM device;quantum-mechanicalmodel;semi-classicalmodel;metal gate.