Catalytic synthesis of ZnO nanorods on patterned silicon wafer�?�An optimum material for gas sensor

[摘要] ZnO nanorods have been synthesized over etch-patterned Si (110) wafer using annealed silver thin film as growth catalyst. The growth of ZnO nanorods were performed by a two-step process. Initially, the deposition of Zn thin film was done on the annealed silver catalyst film over etch-patterned Si (110) substrate by thermal evaporation, and then annealed at 800°C in air. The etching of the patterned Si (110) wafers was carried out by 50% aqueous KOH solution. The samples were investigated by optical microscopy, scanning electron microscopy, X-ray diffraction, Raman spectroscopy and room temperature photoluminescence spectroscopy. `V’ shaped grooves with no undercut were formed after etching due to the anisotropic nature of the KOH etchant. The etch-patterned wafer was used to provide larger surface area for ZnO growth by forming `V’-grooves. This ZnO film may be predicted as a very good material for gas sensor.

[学科分类] 材料工程

[关键词] Patterned wafer;anisotropic etching;nanorods;catalytic growth;surface enhanced Raman scattering;sensor material.