Current�?�voltage studies on �?-FeSi2/Si heterojunction

[摘要] 𝐼â€�?�ð�?��?? characteristics of both ð›�?-FeSi₂/n-Si and ð›�?-FeSi₂/p-Si were studied at room temperature. The junctions were formed by depositing Fe on Si selectively followed by thermal annealing and some samples were later treated by pulsed laser. Temperature of thermal annealing and diode area were also varied. 𝐼â€�?�ð�?��?? studies on all these samples were done and ideality factors were computed. Results obtained were interpreted.

[学科分类] 材料工程

[关键词] Silicide;semiconducting silicide;heterojunction;pulsed laser;𝐼â€�?�ð�?��?? characteristics.