Preparation of Al�?�Sb semiconductor by swift heavy ion irradiation

[摘要] Alâ€�?�Sb bilayer thin films having various thicknesses were deposited by thermal evaporation on ITO-coated conducting glass substrates at a pressure of 10^-5 torr. These films were irradiated by Ag¹²⁺ heavy ions of energy, 160 MeV, with a fluence of 2.2 Ã�? 10¹³ ions/cm², to get aluminum antimonide semiconductor. Rutherford back scattering and optical band gap data confirmed mixing of bilayer to form the semi-conducting system.

[学科分类] 材料工程

[关键词] Thin films;Alâ€�?�Sb;ion irradiation;absorption;RBS;optical band gap.