Optical, electrical and thermoelectric power studies of Al�?�Sb thin film bilayer structure

[摘要] The IIIâ€�?�V semiconductors are of great importance due to their applications in various electro-optic devices. The Alâ€�?�Sb thin film was deposited on glass substrate by thermal evaporation method at a pressure of 10^-5 torr. The samples were annealed for 3 h at different constant temperatures in a vacuum chamber at a pressure of 10^-5 torr. The electrical resistance vs temperature studies show phase transformation from metallic to semiconducting. The observed positive thermoelectric power indicates that Alâ€�?�Sb thin films are ð‘�?-type in nature. The Rutherford back scattering analysis and optical band gap measurements also indicate that the interdiffusion concentration varies with temperature.

[学科分类] 材料工程

[关键词] Annealing;interdiffusion;semiconductor;bilayer;RBS.