Growth and characterization of Hg1â€�?�ð�?�¥Cd𝑥Te epitaxial films by isothermal vapour phase epitaxy (ISOVPE)

[摘要] Growth of Hg_{1â€�?�ð�?��?}Cd_ð‘�?Te epitaxial films by a new technique called asymmetric vapour phase epitaxy (ASVPE) has been carried out on CdTe and CZT substrates. The critical problems faced in normal vapour phase epitaxy technique like poor surface morphology, composition gradient and dislocation multiplication have been successfully solved. The epitaxial films have been electrically characterized by using the Hall effect and capacitanceâ€�?�voltage (𝐶â€�?�ð�?��??) measurements.

[学科分类] 材料工程

[关键词] MCT;epitaxy;characterization;vapour phase.