Synthesis and purification of some main group organometallic precursors for compound semiconductors

[摘要] Metalâ€�?�organic vapour phase epitaxy/chemical vapour deposition (MOVPE/MOCVD) has emerged recently as the method of choice for large scale preparation of a variety of low dimension inorganic materials; particularly compound semiconductors, used in modern electronic and opto-electronic devices. The success of this process depends on the availability of suitable molecular precursors of desired purity. Group V hydrides (e.g. NH₃, PH₃, AsH₃, SbH₃) have been employed conventionally for deposition of IIIâ€�?�V semiconductor materials. Inherent weakness of this hydride source, particularly heavier ones (for instance very low utilization (> 0.1%) of AsH₃ in GaAs synthesis; ∼ 4 h half life of SbH₃ at room temperature) has been a driving force to develop new molecular precursors with desirable properties. This talk will briefly review synthesis and purification of several precursors of groups III (Ga, In), IV, V (As, Sb) and VI (Se, Te).

[学科分类] 材料工程

[关键词] Tertiary arsines;triorganoantimony;palladium(II);TGA.