Si diffusion in GaAs

[摘要] Theoretical studies are carried out to ascertain the dominant mechanism of Si diffusion in GaAs. Lattice dynamical model calculations have shown that the most probable diffusion mechanism is through a single vacancy even though several experiments cannot fix the mechanism as substitutional, substitutionalâ€�?�interstitial pair or neutral defect pair.

[学科分类] 材料工程

[关键词] Solid state diffusion;lattice dynamics;impurity diffusion.