ZrO2 as a high-�? dielectric for strained SiGe MOS devices

[摘要] The potential of ZrO₂ thin film as a high-ðœ�? gate dielectric for scaled MOSFET devices has been studied. ZrO₂ has been deposited directly on a Si_0.8Ge_0.2 substrate by reactive RF magnetron sputtering. An equivalent oxide thickness of < 20 Ã�? with a leakage current of the order of 10^â€�??4 A/cm² at 1 V has been obtained. Well-behaved capacitanceâ€�?�voltage characteristics with an interface state density of 2 Ã�? 10¹¹ cm^â€�??2eV^â€�??1 have been achieved. The deposited dielectric exhibits low charge trapping under constant current stressing.

[学科分类] 材料工程

[关键词] ZrO2;high-ð‘�? dielectric;SiGe MOS devices.