Drain current response delay of FD-SOI MOSFETs in RF operation

[摘要] References(5)Cited-By(1)We investigated the frequency dependences of Y22 of FD-SOI MOSFETs, in which the drain current response delay is observed for the first time. Short channel FD-SOI devices operating in linear region show significant drain current response delay. It is confirmed that FD-SOI MOSFET's RF behavior can be well reproduced with the proposed model including the drain current response delay.

[学科分类] 电子、光学、磁材料

[关键词] FD-SOI;MOSFET;RF;modeling;drain current response delay