GaInAsP/InP long-wavelength lasers with strain-compensated quantum-wire active regions and SiO2/semiconductor reflectors

[摘要] References(8)Cited-By(2)GaInAsP/InP strain-compensated multiple-quantum-wire lasers (wire widths of 19nm and 27nm in a period of 100nm) with SiO2/semiconductor reflectors were realized by electron-beam lithography, CH4/H2 reactive ion etching and two-step organometallic vapor-phase-epitaxial growth processes. As a result, the threshold current densities of these quantum-wire lasers were lower than those of quantum-film lasers prepared on the same initial wafer and oscillations from the transition between the ground levels were observed at room temperature.

[学科分类] 电子、光学、磁材料

[关键词] quantum-wire laser;strain-compensated quantum-well structure;GaInAsP/InP;CH4/H2 RIE;OMVPE regrowth