High-density light-emitting diodes using a lateral p-n junction on patterned (311)A GaAs substrates

[摘要] References(10)We report the high-density light-emitting diode (LED) array using a lateral p-n junction. AlxGa1-xAs lateral p-n junctions were formed on a semi-insulating GaAs (311)A patterned substrate using the amphoteric nature of silicon that behaves as p- and n-type dopant. For the first time, 2400 dots-per-inch (dpi) LED arrays were fabricated using the lateral junction. Electroluminescence spectrum shows a single peak at a wavelength of 813nm with an FWHM of 56nm at room temperature. The light output power was measured as a function of forward injection current. The high-density LED array has potential application in LED printers and displays.

[学科分类] 电子、光学、磁材料

[关键词] Light-emitting diodes;lateral p-n junctions;gallium compounds;high-density LED arrays;patterned-substrates