Modeling and optimization of noise coupling in TSV-based 3D ICs

[摘要] References(4)This paper first proposes an impedance-level model of coupling channel between through silicon vias (TSVs) based on the two-port network theory. In order to get an accurate estimation of the coupling level from TSV-TSV in the early designing stage, we convert the impedance parameters of the model into the ABCD matrix to derive the formula of coupling coefficient, and the accuracy of the proposed formula is validated by comparing with 3D full-wave simulations. Furthermore, a design technique of optimizing the coupling between TSVs is proposed, and through SPICE simulations the proposed technique shows a desirable result to reduce the TSV-TSV coupling.

[学科分类] 电子、光学、磁材料

[关键词] 3D integration;though silicon via (TSV);two-port network;equivalent impedance;noise coupling reduction