Experimental demonstration of a ferroelectric FET using paper substrate

[摘要] References(5)Cited-By(1)A ferroelectric field-effect transistor on a cellulose paper for nonvolatile memory application is fabricated by a low-cost solution-based-only fabrication process. A ferroelectric material, poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)), is used to obtain a wide threshold voltage (VTH) window of �?20 V for the transistor on paper. An on/off current ratio of �?102 is also obtained with a semiconducting channel material, Poly(3-hexylthiophene) (P3HT).

[学科分类] 电子、光学、磁材料

[关键词] ferroelectric transistor;paper substrate;P(VDF-TrFE);P3HT