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Impacts of flexible Vth control, low process variability, and steep SS with low on-current of new structure transistors to ultra-low voltage designs
[摘要] References(18)This paper discusses impacts of flexible Vth control, low process variability, and steep SS with small on-current of new structure devices on ultra-low voltage circuits. Our simulation results based on PTM 22 nm model clarify applicability of ultra-low voltage operation to a nominal speed common SoC designs by an introduction of Vth control as well as low power sensor nodes. We also reveal requirement of process variability suppression for high energy efficiency with steep SS transistors, and utilization of small on-current steep SS transistors to low power and low speed applications. Our qualitative discussion well explains these experiment results.
[发布日期]  [发布机构] 
[效力级别]  [学科分类] 电子、光学、磁材料
[关键词] process variability;adaptive body bias;ultra-low voltage circuits;energy efficiency [时效性] 
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