A novel large-signal model for InP MMIC applications at 110 GHz

[摘要] References(11)This paper presented the development of a novel large-signal equivalent circuit model for InP-based pseudomorphic high electron mobility transistor (PHEMT) MMIC applications beyond 100 GHz. A new set of I-V functions was built in the large-signal model to depict accurately the measured I-V results of this device. The convergence of the model was good during the HB (harmonic balance) simulation. To verify the feasibility of the large-signal model, a 110 GHz MMIC amplifier based on this large-signal model was designed and fabricated, the on-wafer measured large-signal results, which include Pout, Gain and PAE (Power Add Efficiency), were consistent with the simulated ones at 110 GHz. Thus, this new large-signal model has a great potential for InP MMIC applications beyond 100 GHz.

[学科分类] 电子、光学、磁材料

[关键词] large-signal model;SDD;MMIC;InP;PHEMT