Wideband SiGe BiCMOS transimpedance amplifier for 20 Gb/s optical links

[摘要] References(12)A novel bandwidth enhancement technique based on a modified regulated cascode (RGC) transimpedance amplifier (TIA) is proposed and realized. The post stage of the TIA adopts capacitive degeneration and π-type peaking network, maintaining the wideband and low group delay characteristics without increasing power dissipation. The TIA is implemented in a 0.18 µm SiGe BiCMOS technology and tested with an on-chip 300 fF capacitor to emulate a photodiode. The measured transimpedance gain is 61 dBΩ with a �?3 dB bandwidth of 15 GHz. The chip consumes 32 mW power from a single 3.3 V supply and occupies the area of only 0.3 mm2.

[学科分类] 电子、光学、磁材料

[关键词] SiGe BiCMOS;wideband amplifier;modified RGC;capacitive degeneration;π-type peaking network