A fully integrated dual-band CMOS LNA for IEEE802.16a

[摘要] References(6)A fully-integrated, dual-band, high gain, low noise amplifier designed for 802.16a WMAN standard is presented. The targeted frequency bands include un-licensed band UNII 5GHz and licensed band Int'l 10GHz. Our LNA design adopts wide band input matching scheme with adjustable load to achieve an area-efficient dual-band low noise amplifier. The LNA has also achieved the gain and noise figure of 16.1dB and 3.6dB at 5GHz, and 15.7dB and 7.6dB at 10GHz. Additionally, the input reflection coefficient is -7dB and -16.5dB, and the IIP3 is 1.8dBm and 1.1dBm at 5GHz and 10GHz, respectively. Utilizing the 0.18µm CMOS process, the LNA dissipates 14.4mW using a 1.8V supply voltage.

[学科分类] 电子、光学、磁材料

[关键词] low noise amplifier;noise figure;802.16a