Ultra-low voltage high-speed Schmitt trigger circuit in SOI MOSFET technology

[摘要] References(8)Cited-By(1)This paper proposes a novel ultra-low voltage and high speed Schmitt trigger circuit designed in silicon-on-insulator (SOI) technology. The proposed circuit is designed using dynamic threshold MOS (DTMOS) technique and multi-threshold voltage CMOS (MT-CMOS) technique to reduce power consumption and accomplish high speed operation. The experiment shows the proposed Schmitt trigger circuit consumes 4.68µW at 0.7V power supply voltage and the circuit demonstrates the maximum switching speed of 170psec.

[学科分类] 电子、光学、磁材料

[关键词] SOI;Schmitt trigger;DTMOS;MTCMOS