Optimization of asymmetric single-electron transistor generating ac-induced dc current

[摘要] References(4)Charge tunneling events in an ac-voltage-driven asymmetric single-electron transistor (aSET) under appropriate gate charge are rectified due to the tilted Coulomb blockade (CB) diagram, which induces a finite dc electric current even under zero dc biasing. We demonstrate dependence of the dc current upon the gate charge and the amplitude of the ac voltage by means of numerical simulation based on the Monte Carlo method. Device parameters of the aSET optimized for generation of the ac-induced dc current are derived by both analytical and numerical methods.

[学科分类] 电子、光学、磁材料

[关键词] single-electron transistor;Coulomb blockade;single charge tunneling;Monte Carlo method