A compact band selection filter in 0.18-µm CMOS technology
[摘要] References(6)A compact band selection filter (BSF) is implemented in a 0.18-µm CMOS technology. The structure consists of a pair of symmetric slow wave anti-coupled line and a shunted transistor. When the transistor is in the off-state, the BSF can work as a low-pass filter. The measured insertion loss is 3dB, and the return loss is better than 9dB from DC to 10GHz. When the transistor is in the on-state, the BSF can work as a bandpass filter. The measured insertion loss is 3dB, and the return loss is better than 10dB from 14 to 27GHz.
[发布日期] [发布机构]
[效力级别] [学科分类] 电子、光学、磁材料
[关键词] band selection filter;CMOS;lowpass filter;bandpass filter [时效性]