Temperature-dependent power-law model for submicron CMOS circuits EOS breakdown study

[摘要] References(15)A temperature-dependent power-law model to simulate the pulsing EOS breakdown in CMOS integrated circuits (ICs) was proposed and evaluated in this study. It is a logarithm form of power-law model inversely related to the temperature. Fitting the results from the stressing of different commercial ICs with the grounded-gate NMOS (GGNMOS) ESD circuits by the electrical pulses indicated that the new model displayed comparable accuracy to the traditional E model/thermochemical model at constant/room temperature. When temperature changed, however, the new model had a better relationship in regression. The temperature-dependent power-law model could be used to evaluate the EOS window design of integrated circuits and be implemented into the components classification for the assembly line’s quality control.

[学科分类] 电子、光学、磁材料

[关键词] pulse stressing;EOS;grounded-gate NMOS (GGNMOS);E model;regression analysis