GROWTH AND CHARACTERIZATION OF 4H-SiCBY THERMAL EVAPORATION METHOD

[摘要] 4H-SiC epitaxial layer was grown on P- type Si (100) substrate by introducing the mixture of Si and C60 powder of high purity (99.99%) with weight ratio of 1:1. Source material was evaporated by Mo boat using thermal evaporation method. In this growth, boat was heated by a heater by passing current through 210 A, and increase the temperature of boat up to 11000C but keep the temperature of substrate 3000C fixed. The chamber was evacuated using mechanical and diffusion pump with base pressure 5x107 torr. Different structural and optical characterization techniques were used to characterize the material. XRD of the prepared SiC shows the major phase of SiC was hexagonal as well as the existence of 4H-SiC. The impurities in 4H-SiC epitaxial layers are investigated by PL at low temperature. The 4H-SiC layer was observed at peak of 3.22 eV. Tensor 2700 - FTIR was also performed to confirm the results as predicted by XRD. It shows Si-Si bond peak at 520 cm-1 and Si-C bond peak at 750 cm-1. Micro-Raman mapping was also preformed to analyze SiC (LA) mode at 610 cm-1 and SiC (TO) mode at 796 cm-1 but (TO) mode stress free value of 4H-SiC was observed at 777 cm-1. There are two another peaks also observed at 1300 cm-1 and 1600 cm-1 corresponding to diamond like carbon and graphitic carbon and these peaks confirm the carbon rich growth of SiC.

[学科分类] 生物技术

[关键词] P-type Si (100);SiC;Thermal Evaporation Method