LOW-TEMPERATURE FORMATION OF 312 PHASEIN Ti-Si-C TERNARY COMPOUND

[摘要] We report on the formation of the Ti3SiC2 nanolaminate phase in the Ti-Si-C thin filmsystem, using a UHV magnetron sputtering technique with top mounted sample holder,from elemental and compound targets. The formation of the Ti3SiC2 (or 312 phase) hasbeen evidenced by detailed X-ray diffraction analysis followed by full-profile quantitativeanalysis of the obtained diffractograms. It has been proven that for depositiontemperatures as low as 500C, there is a significant amount of 312 phase obtained in thedeposited films, in co-existence with the majority TiC phase. This amount increased toabout 21% when the deposition temperature was raised to 650C. The ternary 312 phasebecomes predominant at around 60% relative abundance for slight off-stoichiometric, Siincreased, content of the alloy, for temperatures as low as 650C. The conditions forimproving the relative abundance of the 312 phase within our experimental setup arepointed out and explained in terms of a nucleation and growth model of nanostructureformation from the amorphous precursor (?).

[学科分类] 生物技术

[关键词] ternary compounds;nanolaminates;X-ray diffraction analysis